4GB RAM Micron Crucial Jedec ddr4 2400 MHz dram 4GB pc4-19200 CL17

675 ₴

StateUsed

Apple Mac

1 month

Україна

Київська область

Велика Олександрівка Get directions →

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Published 1 month ago by prosto-tradeukrnet

675 ₴

In Apple Mac category

Велика Олександрівка, Київська область, Україна

Get directions →

52 item views

https://www.youtube.com/watch?v=7J7X7aZvMXQ

m . olx . ua / 773100654/

prosto-trade AT ukr.net

1) 1827 MTA4ATF51264ZH-2G3B2 MICRON 4GB DPAKQN1003

2) 1837 MTA4ATF51264HZ-2G3E2 MICRON 4GB DPAL57P009

3) ( — ) 1750 MTA4ATF51264HZ-2G3E2 MICRON 4GB DPAJK9E001 – SOLD. ПРОДАНО.

4) 1837 MTA4ATF51264HZ-2G3E2 MICRON 4GB DPAL57P009

Type of RAM (Module Bandwidth - PC4-19200) (DDR4 - Double Data Rate) (SDRAM - Synchronous Dynamic Random Access Memory).

(Data Rate MT/s. - RAM speed = 2400.

Memory module: 2400 (MT/s Data Rate) 17-17-17-39 (Module Type H - Small Outline SO-DIMM)

Buffered ECC = False - Buffering Not Present

Clock Frequency = Clock Frequency = 1200 MHz

Supply voltage: from negative 0.0 W to 1.2 W = 1200 milli-volts

Cells (cells) 1T1C have all identical capacity and capability and ultra size (in several NANO dimensional sizes) - which have a built structure and consist of a transistor (used for isolation) and a capacitor which in turn accumulates an electric charge or electron in the form of 1 bit of data in one capacitor, the material in this cap. is electrically conductive or active - silicon with a magnitude of 1 volt, and negative which discharges the cap. to zero 0.0 volt.

(each separate bank on the board has accumulation up to 1 GB of data)

Timing scheme: (Clock Cycles CL17)

board test was performed with the program:

MemTest 86 v. 11.3 Pro Build 1000

PassMarkSoftware - passmark com

Number of RAM modules: 1

Detected number of RAM SPDs: 1

Total physical memory: 3995M

RAM Configuration:

Transfer Speed: 2400MT/s

Channel Mode: x1 Channel

Timings: 17-17-17-39

Voltage: 1.200mV

ECC active: No

Maximum clock frequency (MHz): 1200 (JEDEC)

Maximum data transfer rate (MT/s): DDR4-2400

Maximum bandwidth (MB/sec.): PC4-19200

Memory capacity (MB): 4096

Manufacturer name (JEDEC): Micron Technology

SPD version: 1.1

ECC: No

SPD: 0

Module part: 4ATF51264HZ-2G3E2

Module version: 0x0032

Module serial number: 1E5F113A

Module location: 0x0F

Row address bits: 16

Column address bits: 10

Banks: 8

Ranks: 1

Device width in bits: 16

Bus width in bits: 64

Module voltage: 1.2V

Supported latencies (CAS): 10 11 12 13 14 15 16 17 18 19 20 21

Maximum clock frequency MHz: 1200

Maximum transfer speed MT/s: DDR4-2400

Maximum bandwidth MB/sec.: PC4-19200

Minimum cycle time, tCK ns: 0.833

Minimum CAS latency time, tAA ns: 13.750

Minimum RAS to CAS delay, tRCD ns: 13.750

Minimum row precharge time, tRP ns: 13.750

Minimum active to precharge time, tRAS ns: 32.000

Minimum activate to activate row delay, tRRD ns: 5.300

Minimum auto-refresh to active auto-refresh time, tRC ns: 45.750

Minimum command period from auto-refresh to active auto-refresh, tRFC ns: 350.000

DDR4 Specific SPD Attributes

Maximum Clock Cycle Time, tCKmax ns: 1.600

Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC2 ns: 260.000

Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC4 ns: 160.000

Minimum Activate to Activate Delay diff. bank group, tRRD_Smin ns: 5.300

Minimum Activate to Activate Delay same bank group, tRRD_Lmin ns: 6.400

Minimum CAS to CAS Delay Time Same Bank Group, tCCD_Lmin ns: 5.000

Minimum Four Activate Window Delay ns: 30.000

Maximum Activate Window in units of tREFI: 8192

Thermal Sensor Present: No

DRAM Stepping: 69

SDRAM Package Type: Monolithic, 1 die, Single load stack

Maxium Activate Count (MAC): Unlimited MAC

Post Package Repair Supported: Yes

Module Type: SO-DIMM

Total Width: 64 bits

Data Width: 64 bits

Form Factor: SODIMM

physical memory: 3995M (11986 MB/s)

RAM Configuration: DDR4 2400MT/s x1 Channel 17-17-17-39 1.200mV

Detected number of RAM SPDs: 1

SPD 0: 4GB DDR4 1Rx16 PC4-19200

Number of RAM modules: 1

DIMM0: 1Rx8 PC4-19200

Vendor Part Info: 0x802C

SMBIOS Profile: 2400MT/s

support . apple . com / kb / SP760?locale=uk_UA

micron . com / products / memory / dram-modules / sodimm

micron . com / products / memory / dram-modules / udimm

Published on 2026/05/17. Modified on 2026/05/17.

Description

https://www.youtube.com/watch?v=7J7X7aZvMXQ

m . olx . ua / 773100654/

prosto-trade AT ukr.net

1) 1827 MTA4ATF51264ZH-2G3B2 MICRON 4GB DPAKQN1003

2) 1837 MTA4ATF51264HZ-2G3E2 MICRON 4GB DPAL57P009

3) ( — ) 1750 MTA4ATF51264HZ-2G3E2 MICRON 4GB DPAJK9E001 – SOLD. ПРОДАНО.

4) 1837 MTA4ATF51264HZ-2G3E2 MICRON 4GB DPAL57P009

Type of RAM (Module Bandwidth - PC4-19200) (DDR4 - Double Data Rate) (SDRAM - Synchronous Dynamic Random Access Memory).

(Data Rate MT/s. - RAM speed = 2400.

Memory module: 2400 (MT/s Data Rate) 17-17-17-39 (Module Type H - Small Outline SO-DIMM)

Buffered ECC = False - Buffering Not Present

Clock Frequency = Clock Frequency = 1200 MHz

Supply voltage: from negative 0.0 W to 1.2 W = 1200 milli-volts

(each separate bank on the board has accumulation up to 1 GB of data)

Timing scheme: (Clock Cycles CL17)

board test was performed with the program:

MemTest 86 v. 11.3 Pro Build 1000

PassMarkSoftware - passmark com

Number of RAM modules: 1

Detected number of RAM SPDs: 1

Total physical memory: 3995M

RAM Configuration:

Transfer Speed: 2400MT/s

Channel Mode: x1 Channel

Timings: 17-17-17-39

Voltage: 1.200mV

ECC active: No

Maximum clock frequency (MHz): 1200 (JEDEC)

Maximum data transfer rate (MT/s): DDR4-2400

Maximum bandwidth (MB/sec.): PC4-19200

Memory capacity (MB): 4096

Manufacturer name (JEDEC): Micron Technology

SPD version: 1.1

ECC: No

SPD: 0

Module part: 4ATF51264HZ-2G3E2

Module version: 0x0032

Module serial number: 1E5F113A

Module location: 0x0F

Row address bits: 16

Column address bits: 10

Banks: 8

Ranks: 1

Device width in bits: 16

Bus width in bits: 64

Module voltage: 1.2V

Supported latencies (CAS): 10 11 12 13 14 15 16 17 18 19 20 21

Maximum clock frequency MHz: 1200

Maximum transfer speed MT/s: DDR4-2400

Maximum bandwidth MB/sec.: PC4-19200

Minimum cycle time, tCK ns: 0.833

Minimum CAS latency time, tAA ns: 13.750

Minimum RAS to CAS delay, tRCD ns: 13.750

Minimum row precharge time, tRP ns: 13.750

Minimum active to precharge time, tRAS ns: 32.000

Minimum activate to activate row delay, tRRD ns: 5.300

Minimum auto-refresh to active auto-refresh time, tRC ns: 45.750

Minimum command period from auto-refresh to active auto-refresh, tRFC ns: 350.000

DDR4 Specific SPD Attributes

Maximum Clock Cycle Time, tCKmax ns: 1.600

Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC2 ns: 260.000

Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC4 ns: 160.000

Minimum Activate to Activate Delay diff. bank group, tRRD_Smin ns: 5.300

Minimum Activate to Activate Delay same bank group, tRRD_Lmin ns: 6.400

Minimum CAS to CAS Delay Time Same Bank Group, tCCD_Lmin ns: 5.000

Minimum Four Activate Window Delay ns: 30.000

Maximum Activate Window in units of tREFI: 8192

Thermal Sensor Present: No

DRAM Stepping: 69

SDRAM Package Type: Monolithic, 1 die, Single load stack

Maxium Activate Count (MAC): Unlimited MAC

Post Package Repair Supported: Yes

Module Type: SO-DIMM

Total Width: 64 bits

Data Width: 64 bits

Form Factor: SODIMM

physical memory: 3995M (11986 MB/s)

RAM Configuration: DDR4 2400MT/s x1 Channel 17-17-17-39 1.200mV

Detected number of RAM SPDs: 1

SPD 0: 4GB DDR4 1Rx16 PC4-19200

Number of RAM modules: 1

DIMM0: 1Rx8 PC4-19200

Vendor Part Info: 0x802C

SMBIOS Profile: 2400MT/s

support . apple . com / kb / SP760?locale=uk_UA

micron . com / products / memory / dram-modules / sodimm

micron . com / products / memory / dram-modules / udimm

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